CM75DU-12F_09 MITSUBISHI, CM75DU-12F_09 Datasheet
CM75DU-12F_09
Related parts for CM75DU-12F_09
CM75DU-12F_09 Summary of contents
Page 1
... LABEL HIGH POWER SWITCHING USE ¡I C ..................................................................... ¡V CES ............................................................ ¡Insulated Type ¡2-elements in a pack Tc measured point 2–φ6.5 MOUNTING HOLES 13.5 TAB #110. t=0.5 2.5 16 C2E1 MITSUBISHI IGBT MODULES CM75DU-12F 75A 600V Dimensions RTC C1 E2 RTC CIRCUIT DIAGRAM Feb. 2009 ...
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... E GE IGBT part (1/2 module) FWDi part (1/2 module) *2 Case to heat sink, Thermal compound applied Case temperature measured point is just under the chips ) does not exceed MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE Ratings 600 ±20 75 150 (Note 2) 75 (Note 2) 150 290 – ...
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... ies oes C res ( MITSUBISHI IGBT MODULES CM75DU-12F HIGH POWER SWITCHING USE COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL 15V 25° 125° 100 150 COLLECTOR CURRENT I (A) ...
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... Per unit base = – – Single Pulse 25° – 700 4 CM75DU-12F 10 – 0.43K/W th(j–c) = 0.90K/W th(j– – – – – ...