GA200TS60UPBF Vishay Semiconductors, GA200TS60UPBF Datasheet - Page 3

• Manufacturer Part Number: GA200TS60UPBF
• Description: "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
• Manufacturer: Vishay Semiconductors

Document Number: 94545
Revision: 04-May-10
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1000
1000
100
100
10
10
1
0.5
4.0
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
V
T
500 µs pulse width
T
V
500 µs pulse width
V
CE
J
V
J
GE
GE
= 125 °C
= 125 °C
GE
5.0
- Collector-to-Emitter Voltage (V)
= 20 V
= 15V
1.0
- Gate-to-Emitter Voltage (V)
140
120
100
80
60
40
20
T
0
0.1
J
= 25 °C
6.0
T
J
1.5
= 25 °C
Square wave:
7.0
60 % of rated
Ideal diodes
I
For technical questions, contact:
2.0
voltage
8.0
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 200 A
Fig. 1 - Typical Load Current vs. Frequency
2.5
9.0
(Load Current = I
1
f - Frequency (kHz)
RMS
of Fundamental)
[e-mail]
Fig. 4 - Case Temperature vs. Maximum Collector Current
10
2.5
1.5
160
140
120
100
Fig. 5 - Typical Collector to Emitter Voltage vs.
80
60
40
20
3
2
1
0
20
0
For both:
Duty cycle: 50 %
T = 125 °C
T
Gate drive as specified
Power Dissipation =
Vishay High Power Products
J
sink
Maximum DC Collector Current (A)
40
50
T
= 90 °C
J
Junction Temperature
- Junction Temperature (°C)
60
100
400 A
120
80
GA200TS60UPbF
W
150
200 A
100
100
200
100 A
120
250
140
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160
300
3