GA200TS60UPBF Vishay Semiconductors, GA200TS60UPBF Datasheet - Page 4

• Manufacturer Part Number: GA200TS60UPBF
• Description: "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A
• Manufacturer: Vishay Semiconductors

GA200TS60UPbF
Vishay High Power Products
www.vishay.com
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Fig. 8 - Typical Switching Losses vs. Gate Resistance
40
35
30
25
20
20
16
12
8
4
0
0
0
V
I
V cc = 360 V
T
CC
C
V
I
c
J
Fig. 7 - Typical Gate Charge vs.
GE
= 135 A
= 200 A
= 125 °C
= 400 V
0.001
= 15 V
200
10
0.01
Q
Gate to Emitter Voltage
0.1
R
G
1E-005
G
1
- Total gate Charge (nC)
- Gate Resistance (Ω)
400
20
0.10
D = 0.50
0.20
0.05
0.02
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case
600
0.01
30
0.0001
For technical questions, contact:
800
40
Single pulse
(thermal response)
"Half-Bridge" IGBT INT-A-PAK
1000
(Ultrafast Speed IGBT), 200 A
50
0.001
t
1
- Rectangular Pulse Duration (s)
0.01
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500
400
300
200
100
70
60
50
40
30
20
10
0.1
0
0
0
0
Fig. 9 - Typical Switching Losses vs.
V
T
V
Rg1 = 15 Ω
Rg2 = 0 Ω
I
V
Safe operating area
V
J
CC
C
GE
50
100
CE
GE
= 125 °C
- Collector-to-Emitter Current (A)
Collector to Emitter Current
Fig. 10 - Reverse Bias SOA
= 360 V
= 15 V
= 20 V
- Collector-to-Emitter Voltage (V)
100 150 200 250 300 350 400
200
1
300
400
500
Document Number: 94545
10
600
Revision: 04-May-10
700