QM30HA-HB Mitsumi Electronics, Corp., QM30HA-HB Datasheet
QM30HA-HB
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QM30HA-HB Summary of contents
Page 1
... MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE • I Collector current .......................... 30A C • V Collector-emitter voltage ........... 600V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 0 3–M4 3.5 QM30HA-HB INSULATED TYPE File No. E80271 Dimensions Feb.1999 ...
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... C I =30A, V =2. =300V, I =30A, I =60mA, –I =0. Transistor part Diode part Conductive grease applied MITSUBISHI TRANSISTOR MODULES QM30HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 600 600 600 7 30 250 1.8 30 300 –40~+150 –40~+125 2500 0.98~1.47 10~15 kg·cm 1.47~1.96 15~20 kg· ...
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... =20A –1 10 – (A) B MITSUBISHI TRANSISTOR MODULES QM30HA-HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) T =25° =125° =5. =2. ...
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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE QM30HA-HB INSULATED TYPE I =–0. =–3.0A B2 400 500 600 700 800 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25°C ...
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... – FORWARD CURRENT QM30HA-HB INSULATED TYPE =300V CC I =60mA B1 I =–0. =25° =125°C j – ...