QM30HA-HB Mitsumi Electronics, Corp., QM30HA-HB Datasheet - Page 4

• Manufacturer Part Number: QM30HA-HB
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
–1
10
FORWARD BIAS SAFE OPERATING AREA
–1
7
5
4
3
2
7
5
4
3
2
1
0
7
5
3
2
7
5
3
2
7
5
3
2 T
10
0
10
COLLECTOR-EMITTER VOLTAGE V
2
1
0
10
–1
TRANSIENT THERMAL IMPEDANCE
0
–3
V
I
I
BASE REVERSE CURRENT –I
NON–REPETITIVE
0
CHARACTERISTIC (TRANSISTOR)
B1
C
CC
C
=30A
2
2
2
t
=25°C
=60mA
SWITCHING TIME VS. BASE
s
=300V
2 3 4 5 7
3
3
3
t
T
T
f
j
j
=25°C
=125°C
5
5
5
CURRENT (TYPICAL)
7
7
7
DC
10
10
10
1
–2
1
TIME (s)
2
2
2
10
3
3
3
1ms
0
5
5
5
7
7
7
10
2 3 4 5 7
10
10
2
–1
2
2
2
500µs
100µs
3
3
B2
(A)
5
5
CE
7
7
10
(V)
10
10
1
3
0
100
10
10
10
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
2
1
0
COLLECTOR-EMITTER VOLTAGE V
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
=125°C
100
CHARACTERISTICS) (TYPICAL)
20
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
COLLECTOR
DISSIPATION
0.8
200
40
300
60
1.2
I
–V
B2
CEO
=–3.0A
400
80
(V)
1.6
500
100 120
SECOND
BREAKDOWN
AREA
QM30HA-HB
I
600
B2
T
T
j
j
C
=–0.6A
=25°C
=125°C
2.0
INSULATED TYPE
( C)
700
140
CE
800
160
2.4
(V)
Feb.1999