QM50TB-2H Mitsumi Electronics, Corp., QM50TB-2H Datasheet - Page 4

• Manufacturer Part Number: QM50TB-2H
• Manufacturer: Mitsumi Electronics, Corp.

10
10
10
10
10
10
0.5
0.4
0.3
0.2
0.1
FORWARD BIAS SAFE OPERATING AREA
10
3
2
7
5
4
3
2
7
5
4
3
0
1
0
7
5
3
2
5
3
2
7
5
3
2
COLLECTOR-EMITTER VOLTAGE V
10
7
3
2
1
0
10
10
–1
TRANSIENT THERMAL IMPEDANCE
V
I
I
–3
BASE REVERSE CURRENT –I
0
0
B1
C
CHARACTERISTIC (TRANSISTOR)
CC
=50A
2
2
2 3 45 7
=1A
SWITCHING TIME VS. BASE
=600V
3
2 3 4 5 7
3
T
T
4
4
j
j
=25°C
=125°C
CURRENT (TYPICAL)
5
5
7
7
t
t
10
10
s
f
10
1
–2
1
TIME (s)
2
2
2
10
3
3
3
T
4 5 7
4
NON–REPETITIVE
4
0
C
5
5
=25°C
7
7
10
2 3 4 5 7
10
–1
2
2
2
3
3
B2
50µ
4
4
(A)
5
CE
5
7
7
10
(V)
10
10
1
0
3
160
140
120
100
100
10
10
10
80
60
40
20
90
80
70
60
50
40
30
20
10
COLLECTOR-EMITTER REVERSE VOLTAGE
0
0
7
5
4
3
2
7
5
4
3
2
REVERSE BIAS SAFE OPERATING AREA
COLLECTOR-EMITTER VOLTAGE V
2
1
0
0.4
0
0
REVERSE COLLECTOR CURRENT VS.
DERATING FACTOR OF F. B. S. O. A.
T
MITSUBISHI TRANSISTOR MODULES
COLLECTOR-EMITTER REVERSE
j
=125°C
20
CHARACTERISTICS) (TYPICAL)
CASE TEMPERATURE T
VOLTAGE (DIODE FORWARD
MEDIUM POWER SWITCHING USE
200
0.8
COLLECTOR
DISSIPATION
40
60
400
1.2
–V
CEO
80 100 120 140
I
B2
(V)
600
1.6
=–3A
SECOND
BREAKDOWN
AREA
QM50TB-2H
I
T
T
C
B2
800
2.0
INSULATED TYPE
j
j
=25°C
=125°C
( C)
=–1A
CE
1000
160
(V)
2.4
Feb.1999