QM50TB-2HB Mitsumi Electronics, Corp., QM50TB-2HB Datasheet
QM50TB-2HB
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QM50TB-2HB Summary of contents
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... BuN EuN BvN EvN BwN EwN 80± 0.25 LABEL MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE • I Collector current .......................... 50A C • V Collector-emitter voltage ......... 1000V CEX • current gain............................. 750 FE • Insulated Type • UL Recognized Yellow Card No. E80276 (N) 4– ...
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... CE V =600V, I =50A, I =0.1mA, I =–1. Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE Ratings 1000 1000 1000 400 3 500 –40~+150 –40~+125 2500 0 ...
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... =50A C 10 =30A C – (A) B MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =25° =125° =10V = ...
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... COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL 0.4 0.8 COLLECTOR-EMITTER REVERSE VOLTAGE –V QM50TB-2HB INSULATED TYPE I =–1A B2 600 800 1000 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( =25° =125°C j 1.2 1.6 2.0 ...
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... =600V =100mA B1 –I = FORWARD CURRENT QM50TB-2HB INSULATED TYPE =25° =125°C j – (A) F Feb.1999 ...