QM50TB-2HB Mitsumi Electronics, Corp., QM50TB-2HB Datasheet - Page 3

• Manufacturer Part Number: QM50TB-2HB
• Manufacturer: Mitsumi Electronics, Corp.

PERFORMANCE CURVES
10
10
100
10
80
60
40
20
–1
–2
0
7
5
4
3
2
7
5
4
3
2
5
4
3
2
1
0
10
0
COLLECTOR-EMITTER VOLTAGE V
2.8
0
COLLECTOR-EMITTER SATURATION
–3
BASE-EMITTER VOLTAGE V
V
T
2
CHARACTERISTICS (TYPICAL)
T
COMMON EMITTER OUTPUT
j
CHARACTERISTIC (TYPICAL)
CE
=25°C
j
COMMON EMITTER INPUT
=25°C
3
=4V
3.2
T
T
1
4
j
j
BASE CURRENT I
=25°C
=125°C
5
VOLTAGE (TYPICAL)
7
10
3.6
–2
2
2
3
I
C
4
=30A
5
4.0
3
7
10
I
B
B
–1
=10mA
(A)
2
4.4
4
I
C
BE
3
=50A
4
(V)
5
CE
7
4.8
(V)
5
10
0
10
10
10
10
10
10
10
10
–1
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
7
5
4
3
2
3
2
7
5
4
3
2
7
5
4
3
1
4
3
2
10
0
10
1
0
3 4 5 7
0
0
SWITCHING TIME VS. COLLECTOR
V
I
–I
COLLECTOR CURRENT (TYPICAL)
B1
MITSUBISHI TRANSISTOR MODULES
CC
B2
=100mA
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
COLLECTOR CURRENT I
=600V
=1A
2 3 4 5 7
2 3 4 5 7
MEDIUM POWER SWITCHING USE
T
t
T
T
T
f
t
DC CURRENT GAIN VS.
SATURATION VOLTAGE
t
j
j
=125°C
on
s
=25°C
j
j
=25°C
=125°C
CURRENT (TYPICAL)
V
10
CE(sat)
1
2 3 4 5 7
V
V
10
10
CE
BE(sat)
=10V
1
1
V
I
B
CE
QM50TB-2HB
=67mA
2 3 4 5 7
2 3 4 5 7
=4V
T
T
10
j
j
=25°C
=125°C
C
C
C
INSULATED TYPE
2
(A)
(A)
(A)
2 3
10
10
2
2
Feb.1999