BGD712C,112 NXP Semiconductors, BGD712C,112 Datasheet - Page 4

AMP GAIN POWER 750MHZ SOT115J

BGD712C,112

Manufacturer Part Number
BGD712C,112
Description
AMP GAIN POWER 750MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
Power Amplifierr
Datasheet

Specifications of BGD712C,112

Applications
CATV
Number Of Circuits
1
Current - Supply
395mA
Mounting Type
Chassis Mount
Package / Case
SOT-115J
Number Of Channels
1
Frequency (max)
750MHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
24V
Single Supply Voltage (max)
30V
Package Type
SOT-115J
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temperature Classification
Commercial
Operating Temp Range
-20C to 100C
Pin Count
7
Mounting
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059734112
NXP Semiconductors
6. Package outline
Fig 1.
BGD712C
Product data sheet
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm 20.8
Package outline SOT115J
VERSION
OUTLINE
SOT115J
max.
A
A 2
U 1
L
B
max.
9.5
A 2
c
0.51
0.38
b
d
0.25 27.2
c
U 2
E
IEC
max.
D
Q
2.04
2.54
d
p
13.75 2.54 5.08 12.7 8.8
max.
E
q
All information provided in this document is subject to legal disclaimers.
JEDEC
e
y
REFERENCES
Rev. 3 — 29 September 2010
M
e 1
A
B
F
F
0
S
min.
L
JEITA
scale
4.15
3.85
5
p
max.
2.4 38.1 25.4 10.2 4.2 44.75
W
10 mm
Q
750 MHz, 18.5 dB gain power doubler amplifier
q
Z
1
q 1
2
3
q 2
e
e 1
S
q 2
q 1
D
5
44.25
U 1
PROJECTION
EUROPEAN
p
7
8.2
7.8
U 2
b
8
y
9
UNC
6-32
M
W
B
BGD712C
0.25
w
© NXP B.V. 2010. All rights reserved.
w
x
ISSUE DATE
0.7
x
M
04-02-04
10-06-18
M
B
0.1
SOT115J
y
max.
3.8
Z
4 of 8

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