BGD702,112 NXP Semiconductors, BGD702,112 Datasheet - Page 2
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BGD702,112
Manufacturer Part Number
BGD702,112
Description
AMP GAIN POWER 750MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet
1.BGD702112.pdf
(10 pages)
Specifications of BGD702,112
Operating Frequency
750 MHz
Supply Current
435 mA
Maximum Operating Temperature
+ 100 C
Mounting Style
SMD/SMT
Package / Case
SOT-115
Minimum Operating Temperature
- 20 C
Number Of Channels
1 Channel
Frequency (max)
750MHz
Power Supply Requirement
Single
Single Supply Voltage (typ)
24V
Package Type
SOT-115J
Dual Supply Voltage (min)
Not RequiredV
Dual Supply Voltage (typ)
Not RequiredV
Dual Supply Voltage (max)
Not RequiredV
Operating Temperature Classification
Commercial
Operating Temp Range
-20C to 100C
Pin Count
7
Mounting
Screw
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934015610112::BGD702::BGD702
NXP Semiconductors
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 750 MHz
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a supply voltage of 24 V (DC).
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Nov 27
G
I
V
T
T
tot
frequency range.
stg
mb
i
750 MHz, 18.5 dB gain power doubler
amplifier
p
SYMBOL
SYMBOL
power gain
total current consumption (DC)
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
PARAMETER
f = 50 MHz
f = 750 MHz
V
B
= 24 V
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
PIN
2, 3
7, 8
1
5
9
Side view
Fig.1 Simplified outline.
input
common
+V
common
output
B
1
2
3
18
18.5
40
20
5
MIN.
MIN.
DESCRIPTION
7
8
9
Product specification
MSA319
19
435
65
+100
+100
MAX.
MAX.
BGD702
dB
dB
mA
dBmV
C
C
UNIT
UNIT