BGD702,112 NXP Semiconductors, BGD702,112 Datasheet - Page 5

• Manufacturer Part Number: BGD702,112
• Description: AMP GAIN POWER 750MHZ SOT115J
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD702,112

• Operating Frequency: 750 MHz
• Supply Current: 435 mA
• Maximum Operating Temperature: + 100 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Minimum Operating Temperature: - 20 C
• Number Of Channels: 1 Channel
• Frequency (max): 750MHz
• Power Supply Requirement: Single
• Single Supply Voltage (typ): 24V
• Package Type: SOT-115J
• Dual Supply Voltage (min): Not RequiredV
• Dual Supply Voltage (typ): Not RequiredV
• Dual Supply Voltage (max): Not RequiredV
• Operating Temperature Classification: Commercial
• Operating Temp Range: -20C to 100C
• Pin Count: 7
• Mounting: Screw
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934015610112::BGD702::BGD702

NXP Semiconductors
Table 3 Bandwidth 40 to 550 MHz; V
Notes
1. f
2. Measured according to DIN45004B:
3. The modules normally operate at V
2001 Nov 27
G
SL
FL
s
s
s
CTB
X
CSO
d
V
NF
I
SYMBOL
tot
11
22
21
2
mod
o
750 MHz, 18.5 dB gain power doubler
amplifier
p
f
measured at f
f
f
f
measured at f
p
q
p
q
r
= 549.25 MHz; V
= 55.25 MHz; V
= 493.25 MHz; V
= 540.25 MHz; V
= 547.25 MHz; V
power gain
slope cable equivalent
flatness of frequency response
input return losses
output return losses
phase response
composite triple beat
cross modulation
composite second order distortion 77 channels flat; V
second order distortion
output voltage
noise figure
total current consumption (DC)
p
p
+ f
+ f
p
q
q
PARAMETER
r
q
p
q
= 44 dBmV;
= 548.5 MHz.
 f
= V
= 44 dBmV;
= V
= V
r
= 538.25 MHz.
o
o
o
6 dB;
;
6 dB;
B
B
= 24 V; T
= 24 V, but are able to withstand supply transients up to V
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
77 channels flat; V
77 channels flat; V
see Table 1
f = 50 MHz
f = 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 50 MHz
measured at 547.25 MHz
measured at 55.25 MHz
measured at 548.5 MHz
note 1
d
note 3
mb
im
= 60 dB; note 2
= 35 C; Z
CONDITIONS
5
S
= Z
o
o
o
L
= 44 dBmV;
= 44 dBmV;
= 44 dBmV;
= 75 
18
18.5
0.2

20
19
18
17
20
19
18
17
45




64.5


MIN.
18.5
19.3


27
30
29
22
23
24
23
21

68
68
68
81
68

425
TYP.
Product specification
B
= 30 V.
19

2
0.3








+45
67
67
62
72


435
MAX.
BGD702
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
dB
dB
dB
dBmV
dB
mA
UNIT