BGD812,112 NXP Semiconductors, BGD812,112 Datasheet - Page 2
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BGD812,112
Manufacturer Part Number
BGD812,112
Description
AMP GAIN POWER 860MHZ SOT115J
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet
1.BGD812112.pdf
(10 pages)
Specifications of BGD812,112
Operating Frequency
870 MHz
Operating Supply Voltage
24 V
Supply Current
410 mA
Mounting Style
SMD/SMT
Package / Case
SOT-115
Number Of Channels
1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934055918112::BGD812::BGD812
NXP Semiconductors
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2001 Oct 30
G
I
V
V
T
T
tot
frequency range.
SYMBOL
SYMBOL
stg
mb
B
i
860 MHz, 18.5 dB gain power doubler
amplifier
p
power gain
total current consumption (DC)
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
PARAMETER
PARAMETER
f = 45 MHz
f = 870 MHz
V
B
= 24 V
2
PINNING - SOT115J
handbook, halfpage
CONDITIONS
PIN
2, 3
7, 8
1
5
9
Side view
Fig.1 Simplified outline.
1
2
18.2
19
380
40
20
3
MIN.
MIN.
5
input
common
+V
common
output
7
8
B
9
Product specification
DESCRIPTION
18.8
20
410
30
70
+100
+100
MSA319
MAX.
MAX.
BGD812
dB
dB
mA
V
dBmV
C
C
UNIT
UNIT