BGD812,112 NXP Semiconductors, BGD812,112 Datasheet - Page 4

• Manufacturer Part Number: BGD812,112
• Description: AMP GAIN POWER 860MHZ SOT115J
• Manufacturer: NXP Semiconductors
• Type: General Purpose Amplifierr

Specifications of BGD812,112

• Operating Frequency: 870 MHz
• Operating Supply Voltage: 24 V
• Supply Current: 410 mA
• Mounting Style: SMD/SMT
• Package / Case: SOT-115
• Number Of Channels: 1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055918112::BGD812::BGD812

NXP Semiconductors
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. f
5. Measured according to DIN45004B: f
6. The module normally operates at V
2001 Oct 30
CSO
d
V
NF
I
SYMBOL
tot
2
o
860 MHz, 18.5 dB gain power doubler
amplifier
V
p
r
= 55.25 MHz; V
= V
o
6 dB; measured at f
composite second
order distortion
second order distortion
output voltage
noise figure
total current
consumption (DC)
PARAMETER
p
= 44 dBmV; f
p
+ f
q
q
= 805.25 MHz; V
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
V
79 chs; f
V
note 4
d
CTB compression = 1 dB; 132 chs flat;
f = 859.25 MHz
CSO compression = 1 dB; 132 chs flat;
f = 860.5 MHz
f = 50 MHz
f = 550 MHz
f = 750 MHz
f = 870 MHz
note 6
 f
B
im
o
o
r
= 24 V, but is able to withstand supply transients up to 35 V.
p
= 50.2 dBmV at 745 MHz; note 2
= 47.3 dBmV at 547 MHz; note 3
= 60 dB; note 5
= 849.25 MHz.
= 851.25 MHz; V
m
m
= 210 MHz;
= 210 MHz;
o
o
o
= 44 dBmV; f
CONDITIONS
= 44 dBmV; f
= 44 dBmV; f
q
= 44 dBmV; measured at f
4
p
= V
o
; f
m
m
m
q
= 548.5 MHz
= 746.5 MHz
= 860.5 MHz
= 858.25 MHz; V
p
+ f






64
48
51




380
q
MIN.
q
= V
= 860.5 MHz.
o
6 dB; f













395
TYP.
Product specification
r
= 860.25 MHz;
67
60
58
57
64
71



5.5
5.5
6.5
7.5
410
BGD812
MAX.
dB
dB
dB
dB
dB
dB
dBmV
dBmV
dBmV
dB
dB
dB
dB
mA
UNIT