BT151-500R NXP Semiconductors, BT151-500R Datasheet - Page 6

• Manufacturer Part Number: BT151-500R
• Description: Planar passivated Silicon Controlled Rectifier (SCR) in a SOT78 plastic package intended for use in applications requiring good bidirectional blocking voltage capability, high surge current capability and high thermal cycling performance
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BT151-500R_5
Product data sheet
Symbol
Static characteristics
I
I
I
V
V
I
I
Dynamic characteristics
dV
t
t
GT
L
H
D
R
gt
q
Fig 7.
T
GT
D
/dt
dV
(V/ s)
D
10
10
10
/dt
10
4
3
2
function of junction temperature; minimum
values
Critical rate of rise of off-state voltage as a
0
Characteristics
Parameter
gate trigger current
latching current
holding current
on-state voltage
gate trigger voltage
off-state current
reverse current
rate of rise of off-state
voltage
gate-controlled turn-on
time
commutated turn-off
time
(2)
(1)
50
100
Conditions
V
Figure 8
V
V
I
I
Figure 12
I
V
V
V
waveform; gate open circuit
V
exponential waveform; see
I
dI
V
V
dV
T
T
T
TM
D
D
D
D
R
DM
DM
DM
R
G
= 23 A; T
= 100 mA; V
= 100 mA; V
D
/dt = 5 A/µs; T
= 12 V; T
= 12 V; T
= 12 V; T
= 500 V; T
= 500 V; T
= 25 V; (dI
= 40 A; V
T
/dt = 50 V/µs; R
= 335 V; T
= 335 V; T
= 335 V; T
j
001aaa949
( C)
j
150
j
j
j
= 25 °C; see
Rev. 05 — 2 March 2009
D
= 25 °C; I
= 25 °C; see
= 25 °C; see
j
j
T
D
D
= 125 °C
= 125 °C
/dt)
= 500 V; I
j
j
j
= 125 °C; exponential
= 125 °C; R
= 125 °C; I
= 12 V; T
= 500 V; T
j
M
= 25 °C
GK
= 30 A/µs;
= 100 Ω
T
= 100 mA; see
G
Figure 11
Fig 8.
j
= 100 mA;
Figure 9
Figure 10
= 25 °C; see
TM
j
I
Figure 7
GT(25 C)
GK
= 125 °C
I
= 20 A;
GT
= 100 Ω;
3
2
1
0
junction temperature
Normalized gate trigger current as a function of
50
0
SCR, 12 A, 15mA, 500 V, SOT78
Min
-
-
-
-
-
0.25
-
-
50
200
-
-
50
BT151-500R
Typ
2
10
7
1.4
0.6
0.4
0.1
0.1
130
1000
2
70
100
© NXP B.V. 2009. All rights reserved.
001aaa952
T
j
Max
15
40
20
1.75
1.5
-
0.5
0.5
-
-
-
-
( C)
150
Unit
mA
mA
mA
V
V
V
mA
mA
V/µs
V/µs
µs
µs
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