SA58635 NXP Semiconductors, SA58635 Datasheet - Page 13

• Manufacturer Part Number: SA58635
• Manufacturer: NXP Semiconductors

NXP Semiconductors
12. Dynamic characteristics
Table 12.
V
[1]
SA58635_1
Product data sheet
Symbol
P
I
V
THD+N
SVRR
α
V
t
S/N
T
DD
d(sd-startup)
DD
Fig 12. Output power per channel versus supply voltage
ct(ch)
off
o
o(RMS)
n(o)(RMS)
= 3.6 V; R
V
(mW)
DD
P
(1) THD+N = 10 %
(2) THD+N = 1 %
a. R
o
60
40
20
is the supply voltage on pin AVDD.
0
2.5
Dynamic characteristics
L
supply voltage ripple
signal-to-noise ratio
Parameter
output power
supply current
RMS output voltage
total harmonic
distortion-plus-noise
rejection
channel crosstalk
RMS output noise voltage G
delay time from shutdown
to start-up
switch-off temperature
(1)
(2)
= 16 Ω; in phase
L
= 15
Ω
3.5
+ 32
Ω
; two channels in phase; T
4.5
amplifier
V
threshold
Conditions
stereo; f = 1 kHz; THD+N = 1 %
output 2 × 100 μW at 3 dB crest factor
output 2 × 500 μW at 3 dB crest factor
output 2 × 1 mW at 3 dB crest factor
f = 1 kHz; V
G
P
line out > 10 kΩ
hysteresis
V
o
O
v
v
DD
R
R
= 15 mW; f = 1 kHz
= 4 dB; f = 217 Hz
= 4 dB; A-weight
002aaf025
= 1 V (RMS); f = 1 kHz
L
L
(V)
= 16 Ω; THD+N = 1 %; L + R in phase
= 32 Ω; THD+N = 1 %; L + R in phase
5.5
Rev. 01 — 26 March 2010
O
= 700 mV (RMS)
amb
= 25
°
C; unless otherwise specified.
(mW)
P
(1) THD+N + 10 %
(2) THD+N + 1 %
b. R
o
60
40
20
0
2.5
2 × 25 mW class-G stereo headphone driver
L
(1)
(2)
= 32 Ω; in phase
3.5
Min
2 × 25
-
-
-
0.63
0.89
-
75
90
80
-
-
100
-
-
[1]
4.5
Typ
-
2.5
4.5
6.5
-
-
-
-
-
-
7
-
-
180
35
SA58635
V
© NXP B.V. 2010. All rights reserved.
DD
002aaf026
(V)
Max
-
3.5
5.5
7.5
-
-
0.02
-
-
-
-
15
-
-
-
5.5
13 of 30
Unit
mW
mA
mA
mA
V
V
%
dB
dB
dB
μV
ms
dB
°C
°C