BYQ28E-200E NXP Semiconductors, BYQ28E-200E Datasheet - Page 3

• Manufacturer Part Number: BYQ28E-200E
• Description: Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BYQ28E-200E
Product data sheet
Symbol
V
V
V
I
I
I
I
I
T
T
Electrostatic discharge
V
O(AV)
FRM
FSM
RRM
RSM
Fig 1.
stg
j
RRM
RWM
R
ESD
P
(W)
tot
8
6
4
2
0
average forward current; square waveform;
maximum values
Forward power dissipation as a function of
0
Limiting values
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
repetitive peak reverse current
non-repetitive peak reverse
current
storage temperature
junction temperature
electrostatic discharge voltage
2
0.1
0.2
4
0.5
6
All information provided in this document is subject to legal disclaimers.
I
F(AV)
001aag976
δ = 1
(A)
Conditions
DC
square-wave pulse; δ = 0.5 ; T
both diodes conducting; see
see
δ = 0.5 ; t
square-wave pulse
t
per diode
t
per diode
δ = 0.001 ; t
t
HBM; C = 250 pF; R = 1.5 kΩ; all pins
8
p
p
p
Rev. 4 — 14 July 2011
= 8.3 ms; sine-wave pulse; T
= 10 ms; sine-wave pulse; T
= 100 µs
Figure 2
p
= 25 µs; T
p
Fig 2.
= 2 µs
P
(W)
tot
6
4
2
0
mb
average forward current; sinusoidal waveform;
maximum values
Forward power dissipation as a function of
0
≤ 119 °C; per diode;
Figure
j(init)
mb
j(init)
≤ 119 °C;
4.0
= 25 °C;
= 25 °C;
1;
2
2.8
BYQ28E-200E
Dual ultrafast power diodes
2.2
1.9
4
Min
-
-
-
-
-
-
-
-
-
-40
-
-
a = 1.57
I
F(AV)
© NXP B.V. 2011. All rights reserved.
001aag977
(A)
200
200
150
Max
200
10
10
55
50
0.2
0.2
150
8
6
Unit
V
V
V
A
A
A
A
A
A
°C
°C
kV
3 of 11