BYQ28E-200E NXP Semiconductors, BYQ28E-200E Datasheet - Page 5

• Manufacturer Part Number: BYQ28E-200E
• Description: Dual ultrafast power diodes in a SOT78 (TO-220AB) plastic package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BYQ28E-200E
Product data sheet
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
I
V
R
rr
RM
Fig 4.
F
FR
r
(A)
I
F
15
10
5
0
voltage
Forward current as a function of forward
0
Characteristics
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
peak reverse recovery
current
forward recovery voltage
0.5
(1)
1.0
(2)
V
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F
001aag978
(3)
(V)
Conditions
I
I
I
V
V
I
T
I
ramp recovery; T
I
T
I
T
I
see
F
F
F
F
F
F
F
F
j
j
j
R
R
= 5 A; T
= 5 A; T
= 10 A; T
= 2 A; V
= 25 °C; see
= 1 A; V
= 0.5 A; I
= 25 °C; see
= 2 A; V
= 25 °C; see
= 1 A; dI
= 200 V; T
= 200 V; T
Figure 7
1.5
Rev. 4 — 14 July 2011
j
j
R
R
R
F
= 25 °C; see
= 150 °C; see
j
R
/dt = 10 A/µs; T
≥ 30 V; dI
= 30 V; dI
≥ 30 V; dI
= 25 °C; see
= 1 A; step recovery;
j
j
= 25 °C
= 100 °C
Figure 5
Figure 6
Figure 5
j
= 25 °C; see
Fig 5.
I
I
R
F
F
F
F
/dt = 20 A/µs;
/dt = 20 A/µs;
/dt = 100 A/µs;
Figure 4
Figure 4
Figure 4
j
Reverse recovery definitions; ramp recovery
= 25 °C;
Figure 5
dl
dt
F
I
RM
Q
r
t
BYQ28E-200E
rr
Dual ultrafast power diodes
Min
-
-
-
-
-
-
-
-
-
-
Typ
0.95
0.8
1.1
2
0.1
4
15
10
0.4
1
© NXP B.V. 2011. All rights reserved.
Max
1.1
0.895
1.25
10
0.2
9
25
20
0.7
-
25 %
003aac562
time
Unit
V
V
V
µA
mA
nC
ns
ns
A
V
100 %
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