PMEG3010BER NXP Semiconductors, PMEG3010BER Datasheet - Page 2

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package

PMEG3010BER

Manufacturer Part Number
PMEG3010BER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PMEG3010BER_1
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
Type number
PMEG3010BER
Type number
PMEG3010BER
Symbol
V
I
I
P
F(AV)
FSM
R
tot
The marking bar indicates the cathode.
Pinning
Ordering information
Marking codes
Limiting values
Description
cathode
anode
Parameter
reverse voltage
average forward current
non-repetitive peak
forward current
total power dissipation
Package
Name
-
Rev. 01 — 20 April 2009
Description
plastic surface-mounted package; 2 leads
Conditions
T
square wave;
f = 20 kHz
T
T
square wave;
t
T
p
j
amb
sp
amb
= 0.5;
= 8 ms
= 25 C
1 A low V
Marking code
B8
140 C
[1]
120 C
25 C
Simplified outline
1
F
MEGA Schottky barrier rectifier
PMEG3010BER
[3][4]
[3][5]
[3][1]
[1]
[2]
Min
-
-
-
-
-
-
-
2
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Max
30
1
1
50
0.57
0.95
1.8
1
sym001
Version
SOD123W
Unit
V
A
A
A
W
W
W
2
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