PMEG3010BER NXP Semiconductors, PMEG3010BER Datasheet - Page 8

Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package

PMEG3010BER

Manufacturer Part Number
PMEG3010BER
Description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with anintegrated guard ring for stress protection, encapsulated in a SOD123W small and flatlead Surface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
PMEG3010BER_1
Product data sheet
Fig 11. Average forward current as a function of
I
F(AV)
(A)
(1)
(2)
(3)
(4)
1.5
1.0
0.5
0.0
0
Ceramic PCB, Al
T
ambient temperature; typical values
j
= 1; DC
= 0.5; f = 20 kHz
= 0.2; f = 20 kHz
= 0.1; f = 20 kHz
= 150 C
25
(1)
(2)
(3)
(4)
50
2
O
75
3
, standard footprint
100
125
T
amb
006aab445
150
( C)
175
Rev. 01 — 20 April 2009
Fig 12. Average forward current as a function of
I
F(AV)
(A)
(1)
(2)
(3)
(4)
1.5
1.0
0.5
0.0
0
T
solder point temperature; typical values
1 A low V
j
= 1; DC
= 0.5; f = 20 kHz
= 0.2; f = 20 kHz
= 0.1; f = 20 kHz
= 150 C
25
(1)
(2)
(3)
(4)
50
F
MEGA Schottky barrier rectifier
PMEG3010BER
75
100
125
© NXP B.V. 2009. All rights reserved.
T
sp
006aab446
150
( C)
175
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