BAS21H NXP Semiconductors, BAS21H Datasheet - Page 3

Single high-voltage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package

BAS21H

Manufacturer Part Number
BAS21H
Description
Single high-voltage switching diode, encapsulated in a SOD123F small and flat leadSurface-Mounted Device (SMD) plastic package
Manufacturer
NXP Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS21H
Manufacturer:
NXP
Quantity:
21 000
Part Number:
BAS21H
Manufacturer:
ELCO
Quantity:
2 895
Part Number:
BAS21H
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BAS21H B2
Manufacturer:
KF科范微半导体
Quantity:
20 000
Company:
Part Number:
BAS21H,115
Quantity:
50 000
Company:
Part Number:
BAS21HMFHT116
Quantity:
9 000
Part Number:
BAS21HT1G
Manufacturer:
ON Semiconductor
Quantity:
152 647
Part Number:
BAS21HT1G
Manufacturer:
ON Semiconductor
Quantity:
4 750
Part Number:
BAS21HT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BAS21HT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BAS21HT1G
Quantity:
4 500
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BAS21H_2
Product data sheet
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
Table 6.
[1]
[2]
[3]
Symbol
V
V
I
I
I
P
T
T
T
Symbol
R
R
F
FRM
FSM
j
amb
stg
RRM
R
tot
th(j-a)
th(j-sp)
Pulse test: t
T
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
Soldering point of cathode tab.
j
= 25 C prior to surge.
Limiting values
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Parameter
repetitive peak reverse
voltage
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
p
300 s;
Rev. 02 — 3 November
0.02.
Conditions
in free air
Conditions
t
square wave
T
p
amb
= 0.25
= 1 ms;
t
t
t
p
p
p
= 1 s
= 100 s
= 10 ms
25 C
Single high-voltage switching diode
[1][2]
[3]
[1]
[2]
[3]
Min
-
-
Min
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
© NXP B.V. 2006. All rights reserved.
BAS21H
Max
250
200
200
625
9
3
1.7
375
150
+150
+150
Max
330
70
Unit
V
V
mA
mA
A
A
A
mW
C
C
C
Unit
K/W
K/W
3 of 10

Related parts for BAS21H