BAV170 NXP Semiconductors, BAV170 Datasheet - Page 3

• Manufacturer Part Number: BAV170
• Description: Epitaxial, medium-speed switching,double diode in a small SOT23 plasticSMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board.
ELECTRICAL CHARACTERISTICS
T
2003 Mar 25
Per diode
V
V
I
I
I
P
T
T
Per diode
V
I
C
t
j
F
FRM
FSM
R
rr
SYMBOL
SYMBOL
stg
j
RRM
R
tot
= 25 °C unless otherwise specified.
F
Low-leakage double diode
d
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
total power dissipation
storage temperature
junction temperature
forward voltage
reverse current
diode capacitance
reverse recovery time
PARAMETER
PARAMETER
see Fig.3
see Fig.5
f = 1 MHz; V
when switched from I
I
I
R
R
I
I
I
I
V
V
= 10 mA; R
= 1 mA; see Fig.7
F
F
F
F
R
R
= 1 mA
= 10 mA
= 50 mA
= 150 mA
single diode loaded; note 1;
see Fig.2
double diode loaded; note 1;
see Fig.2
surge; see Fig.4
T
= 75 V
= 75 V; T
amb
t
t
t
p
p
p
= 1 µs
= 1 ms
= 1 s
= 25 °C; note 1
R
3
CONDITIONS
L
= 0; see Fig.6
j
= 100 Ω; measured at
= 150 °C
CONDITIONS
j
F
= 25 °C prior to
= 10 mA to
−
−
−
−
0.003
3
2
0.8
−
−
−
−
−
−
−
−
−
−65
−
TYP.
MIN.
900
1 000
1 100
1 250
5
80
−
3
Product data sheet
MAX.
85
75
215
125
500
4
1
0.5
250
+150
150
MAX.
BAV170
mV
mV
mV
mV
nA
nA
pF
µs
V
V
mA
mA
mA
A
A
A
mW
°C
°C
UNIT
UNIT