BAV170 NXP Semiconductors, BAV170 Datasheet - Page 4
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BAV170
Manufacturer Part Number
BAV170
Description
Epitaxial, medium-speed switching,double diode in a small SOT23 plasticSMD package
Manufacturer
NXP Semiconductors
Datasheet
1.BAV170.pdf
(9 pages)
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NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a FR4 printed-circuit board.
GRAPHICAL DATA
2003 Mar 25
handbook, halfpage
R
R
SYMBOL
Low-leakage double diode
th j-tp
th j-a
Device mounted on a FR4 printed-circuit board.
(1) Single diode loaded.
(2) Double diode loaded.
Fig.2
(mA)
I F
300
200
100
0
0
Maximum permissible continuous forward
current as a function of ambient
temperature.
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
(1)
(2)
100
PARAMETER
T amb (
o
C)
MBG521
200
4
handbook, halfpage
note 1
(1) T
(2) T
(3) T
Fig.3
(mA)
I F
300
200
100
CONDITIONS
j
j
j
0
= 150 °C; typical values.
= 25 °C; typical values.
= 25 °C; maximum values.
0
Forward current as a function of forward
voltage; per diode.
0.4
0.8
(1)
VALUE
360
500
(2)
1.2
Product data sheet
V
MLB752 - 1
(3)
F
BAV170
(V)
1.6
UNIT
K/W
K/W