BAW101S NXP Semiconductors, BAW101S Datasheet - Page 3

• Manufacturer Part Number: BAW101S
• Description: The BAW101S is a high-speed switching diode array withtwo separate dice, fabricated in planar technology andencapsulated in a small SOT363 plastic SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed-circuit board, cathode-lead mounting pad = 1 cm
ELECTRICAL CHARACTERISTICS
T
Note
1. Pulse test: pulse width = 300 µs; δ = 0.02.
2003 May 13
Per diode
V
V
I
I
I
P
T
T
T
Per diode
V
V
I
t
C
SYMBOL
SYMBOL
j
F
FRM
FSM
R
rr
stg
j
amb
R
RRM
tot
= 25 °C unless otherwise specified.
BR(R)
F
High voltage double diode
d
continuous reverse voltage
repetitive peak reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
reverse breakdown voltage
forward voltage
reverse current
reverse recovery time
diode capacitance
PARAMETER
PARAMETER
I
I
V
V
when switched from I
R
V
R
F
R
R
R
L
= 100 mA; note 1
= 100 µA
= 100 Ω; measured at I
= 250 V
= 250 V; T
= 0 V; f = 1 MHz
series connection
series connection
single diode loaded; note 1; see Fig.2
double diode loaded; note 1; see Fig.2
square wave; T
t = 1 µs
T
amb
= 25 °C; note 1
amb
3
CONDITIONS
= 150 °C
CONDITIONS
F
j
= 25 °C prior to surge;
= 30 mA to I
R
= 3 mA
R
= 30 mA;
2
.
−
−
−
−
−
−
−
−
−
−65
−
−65
300
−
−
−
−
−
MIN.
MIN.
Product data sheet
300
600
300
600
250
140
625
4.5
350
+150
150
+150
−
1.1
150
50
50
2
BAW101S
MAX.
MAX.
V
V
V
V
mA
mA
mA
A
mW
°C
°C
°C
V
V
nA
µA
ns
pF
UNIT
UNIT