BAW101S NXP Semiconductors, BAW101S Datasheet - Page 5

• Manufacturer Part Number: BAW101S
• Description: The BAW101S is a high-speed switching diode array withtwo separate dice, fabricated in planar technology andencapsulated in a small SOT363 plastic SMD package
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2003 May 13
handbook, full pagewidth
handbook, halfpage
High voltage double diode
Based on square wave currents.
T
(1) V
(2) V
Fig.5
j
I FSM
= 25 °C prior to surge.
(µA)
(A)
10
10
10
I R
10
10
10
10
−1
−1
−2
R
R
1
1
2
2
= V
= V
0
1
Reverse current as a function of junction
temperature.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
RMAX
RMAX
: maximum values.
: typical values.
50
(1)
(2)
100
10
150
T j (°C)
MLE058
200
10
5
2
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
0.6
0.5
0.4
0.3
0.2
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
2
10
3
4
6
t p (µs)
Product data sheet
BAW101S
8
V R (V)
MBG703
MLE059
10
10
4