NUP1301U NXP Semiconductors, NUP1301U Datasheet - Page 6

Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a smallSOT323 (SC-70) Surface-Mounted Device (SMD) plastic package designed toprotect one signal line in rail-to-rail configuration from the damage caused byESD and other transie

NUP1301U

Manufacturer Part Number
NUP1301U
Description
Ultra low capacitance ElectroStatic Discharge (ESD) protection array in a smallSOT323 (SC-70) Surface-Mounted Device (SMD) plastic package designed toprotect one signal line in rail-to-rail configuration from the damage caused byESD and other transie
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
NUP1301U
Manufacturer:
NXP
Quantity:
20 000
NXP Semiconductors
NUP1301U
Product data sheet
Fig 3.
Fig 5.
(mA)
(μA)
I
I
10
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
(1) T
(2) T
(3) T
(4) T
R
F
10
10
10
10
10
−1
−1
−2
−3
−4
−5
1
1
3
2
2
0
Forward current as a function of forward
voltage; typical values
0
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.2
20
0.4
(1)
40
(2)
0.6
(3)
(1)
(2)
(3)
(4)
0.8
(4)
60
1.0
80
All information provided in this document is subject to legal disclaimers.
006aab132
006aab133
1.2
V
V
R
F
(V)
(V)
100
1.4
Rev. 1 — 28 January 2011
Fig 4.
Fig 6.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
−1
1
2
0
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; typical values
0
T
Diode capacitance as a function of reverse
voltage; typical values
Ultra low capacitance ESD protection array
j
amb
= 25 C; prior to surge
= 25 C; f = 1 MHz
10
4
10
8
2
NUP1301U
10
12
3
© NXP B.V. 2011. All rights reserved.
t
V
p
R
(μs)
mbg704
mbg446
(V)
10
16
4
6 of 14

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