PESDXU1UT_SER NXP Semiconductors, PESDXU1UT_SER Datasheet - Page 5

• Manufacturer Part Number: PESDXU1UT_SER
• Description: Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23(TO-236AB) small SMD plastic package designed to protect one high-speed data linefrom the damage caused by ESD and other transients
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 8.
T
[1]
[2]
PESDXU1UT_SER_2
Product data sheet
Symbol
V
I
V
C
V
r
RM
dif
amb
RWM
BR
CL
d
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 2
= 25 C unless otherwise specified
Characteristics
Parameter
reverse stand-off voltage
reverse leakage current
breakdown voltage
diode capacitance
clamping voltage
differential resistance
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Conditions
I
f = 1 MHz; V
I
I
I
I
I
I
I
I
I
I
I
R
PP
PP
PP
PP
PP
PP
PP
PP
PP
PP
R
V
V
V
V
V
= 5 mA
= 1 mA
= 1 A
= 5 A
= 1 A
= 5 A
= 1 A
= 5 A
= 1 A
= 5 A
= 1 A
= 3 A
RWM
RWM
RWM
RWM
RWM
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
= 3.3 V
= 5.0 V
= 12 V
= 15 V
= 24 V
R
= 0 V
[1][2]
[2]
[2]
Min
-
-
-
-
-
-
-
-
-
-
5.8
7.0
14.2
17.1
25.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PESDxU1UT series
Typ
-
-
-
-
-
0.25
0.03
< 1
< 1
< 1
6.4
7.6
15.0
18.9
27.8
0.6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
3.3
5.0
12
15
24
2
1
50
50
50
6.9
8.2
16.7
20.3
30.3
1.5
9
20
12
21
23
39
28
53
40
76
400
80
200
225
300
© NXP B.V. 2009. All rights reserved.
Unit
V
V
V
V
V
nA
nA
nA
V
V
V
V
V
pF
V
V
V
V
V
V
V
V
V
V
A
A
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