IP4085_4385_4386_4387_CX4 NXP Semiconductors, IP4085_4385_4386_4387_CX4 Datasheet - Page 4

• Manufacturer Part Number: IP4085_4385_4386_4387_CX4
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
6. Thermal characteristics
7. Characteristics
Table 5.
T
IP4085_4385_4386_4387_CX4_1
Product data sheet
Symbol
T
T
T
Symbol
V
V
I
LR
amb
stg
reflow(peak)
amb
BR
CL(trt)
Device tested with over 1000 pulses of 30 kV contact discharges, according to the IEC 61000-4-2 model.
Severe self-heating demands a heat-dissipation optimized PCB to prevent the device from de-soldering. For ambient temperatures
above 50 C, the guaranteed life time is 48 hours at 0.7 W, assuming R
Permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time.
= 25 C; unless otherwise specified.
Limiting values
Electrical characteristics
Parameter
breakdown voltage
transient clamping voltage
reverse leakage current
IP4085CX4; IP4385CX4
IP4386CX4
IP4387CX4
Parameter
storage temperature
peak reflow temperature
ambient temperature
Table 4.
[1]
Symbol
R
th(j-a)
…continued
Depends on details of layout.
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
I
I
pulse according to IEC 61000-4-5
V
V
V
R
R
R
R
R
IP4085CX4; IP4386CX4
IP4385CX4
IP4387CX4
IP4085CX4
IP4385CX4
IP4386CX4
IP4387CX4
= 15 mA
= 1 A; T
= +5.0 V
= +14.0 V
= +8.0 V
Rev. 01 — 26 March 2009
Conditions
10 s maximum
amb
85 C at surge peak
IP4085/4385/4386/4387/CX4
Integrated high-performance ESD-protection diodes
th
to be 130 K/W as specified in
Conditions
on a 2-layer PCB
IP4085CX4;
IP4385CX4;
IP4386CX4;
IP4387CX4
Min
-
55
30
Min
16
7.0
10
-
-
-
-
-
-
-
Table
Typ
-
-
-
-
-
-
-
-
-
-
Max
+150
260
+85
[1]
4.
Typ
-
130
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
20.0
10.0
20.0
13.0
200
200
800
Unit
C
C
C
Unit
K/W
Unit
V
V
V
V
V
V
V
nA
nA
nA
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