BUK626R2-40C NXP Semiconductors, BUK626R2-40C Datasheet - Page 5

• Manufacturer Part Number: BUK626R2-40C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK626R2-40C
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
-1
-2
-3
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
-6
Thermal characteristics
δ = 0.5
0.05
0.2
0.02
0.1
single shot
Parameter
thermal resistance from junction to mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 1 — 12 July 2011
10
-3
Conditions
see
N-channel TrenchMOS intermediate level FET
Figure 4
10
-2
BUK626R2-40C
Min
-
10
P
-1
t
Typ
-
p
T
t
p
(s)
© NXP B.V. 2011. All rights reserved.
003aae418
δ =
Max
1.17
T
t
p
t
1
Unit
K/W
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