BUK626R2-40C NXP Semiconductors, BUK626R2-40C Datasheet - Page 7

• Manufacturer Part Number: BUK626R2-40C
• Description: Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK626R2-40C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(A)
I
DSon
D
100
25
20
15
10
80
60
40
20
5
0
0
function of drain-source voltage; typical values
of gate-source voltage; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4
0.25
V
GS
(V) = 10
8
…continued
0.5
12
6.0
0.75
5.0
16
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003aae721
003aae727
V
V
DS
GS
(V)
(V)
4.5
4.0
3.8
3.6
3.4
3.2
20
1
Conditions
I
see
I
V
S
S
Rev. 1 — 12 July 2011
GS
= 25 A; V
= 20 A; dI
Figure 16
= 0 V; V
GS
S
DS
Fig 6.
Fig 8.
/dt = -100 A/µs;
= 0 V; T
= 25 V
(S)
g
(A)
100
I
fs
D
80
60
40
20
N-channel TrenchMOS intermediate level FET
0
60
45
30
15
0
drain current; typical values
function of gate-source voltage; typical values
Forward transconductance as a function of
Transfer characteristics: drain current as a
0
0
j
= 25 °C;
20
1
BUK626R2-40C
40
2
T
Min
-
-
-
j
= 175 °C
60
3
Typ
0.8
43
56
© NXP B.V. 2011. All rights reserved.
T
80
4
j
003aae722
003aae723
= 25 °C
V
I
GS
D
Max
1.2
-
-
(A)
(V)
100
5
Unit
V
ns
nC
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