BUK7107-40ATC NXP Semiconductors, BUK7107-40ATC Datasheet - Page 9
![Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/53/415317/sot426_3d_sml.gif)
BUK7107-40ATC
Manufacturer Part Number
BUK7107-40ATC
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet
1.BUK7107-40ATC.pdf
(15 pages)
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NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 9.
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
g fs
(S)
80
60
40
20
0
5
4
3
2
1
0
−60
junction temperature
drain current; typical values
Gate-source threshold voltage as a function of
0
20
0
40
60
max
min
typ
60
120
80
T
I D (A)
j
(°C)
03ni68
03aa32
Rev. 02 — 6 February 2009
100
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
I
10
10
10
10
10
10
D
8000
6000
4000
2000
(pF)
−1
−2
−3
−4
−5
−6
C
gate-source voltage
as a function of drain-source voltage; typical
values
0
0
N-channel TrenchPLUS standard level FET
10 -2
10 -1
BUK7107-40ATC
2
C rss
min
1
typ
C iss
C oss
4
max
10
V
© NXP B.V. 2009. All rights reserved.
GS
V DS (V)
(V)
03aa35
03ni69
6
10 2
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