BUK7207-30B NXP Semiconductors, BUK7207-30B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7207-30B

Manufacturer Part Number
BUK7207-30B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7207-30B
Manufacturer:
NXP
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Part Number:
BUK7207-30B
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
D
DS
tot
DSon
BUK7207-30B
N-channel TrenchMOS standard level FET
Rev. 3 — 23 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V loads
Automotive systems
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
Conditions
T
V
see
T
V
T
see
j
mb
j
GS
GS
≥ 25 °C; T
= 25 °C; see
Figure
Figure 12
= 25 °C; see
= 10 V; T
= 10 V; I
1; see
j
D
≤ 185 °C
j
= 25 °C;
= 25 A;
Figure
Figure 2
Figure 3
11;
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
General purpose power switching
Motors, lamps and solenoids
[1]
Min
-
-
-
-
Product data sheet
Typ
-
-
-
5.9
Max Unit
30
75
167
7
V
A
W
mΩ

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BUK7207-30B Summary of contents

Page 1

... BUK7207-30B N-channel TrenchMOS standard level FET Rev. 3 — 23 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Figure 13 Simplified outline SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET Min ≤ sup = °C; ...

Page 3

... T pulsed ° ≤ sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B Min Max - -20 20 [1] Figure 1; - 112 [2] Figure [2] Figure 1 ...

Page 4

... Fig 2. Limit DSon DS D Capped due to package 1 All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature = 10 μ 100 μs ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7207-30B Product data sheet Conditions see −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET Min Typ Figure 71.4 03nk52 t p δ = ...

Page 6

... °C G(ext) j measured from drain to centre of die °C j measured from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B Min Typ Max Unit ...

Page 7

... GS R (mΩ (V) DS Fig 6. 03aa35 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET Min Typ - 0. ° DSon Drain-source on-state resistance as a function of gate-source voltage ...

Page 8

... Label 300 400 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET 5 4 max 3 typ 2 min 1 0 − 150 junction temperature ...

Page 9

... ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET 0 − function of drain-source voltage; typical values 03nk79 0.9 1.2 V (V) SD © NXP B.V. 2011. All rights reserved. ...

Page 10

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7207-30B v.3 20110223 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 23 February 2011 BUK7207-30B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 23 February 2011 Document identifier: BUK7207-30B ...

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