BUK7208-40B NXP Semiconductors, BUK7208-40B Datasheet - Page 9

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7208-40B

Manufacturer Part Number
BUK7208-40B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK7208-40B
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Part Number:
BUK7208-40B
Manufacturer:
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Quantity:
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NXP Semiconductors
BUK7208-40B
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
10
V
DD
= 14 V
20
(A)
I
S
100
75
50
25
V
0
30
DD
0
All information provided in this document is subject to legal disclaimers.
Q
= 32 V
G
(nC)
03nl37
40
0.3
Rev. 03 — 7 June 2010
T
T
j
= 185 °C
j
= 25 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
C
3000
2000
1000
0.9
0
10
as a function of drain-source voltage; typical
values
−1
V
N-channel TrenchMOS standard level FET
SD
03nl36
(V)
1.2
1
C
C
C
rss
iss
oss
BUK7208-40B
10
V
© NXP B.V. 2010. All rights reserved.
DS
(V)
03nl43
10
2
9 of 14

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