BUK7214-75B NXP Semiconductors, BUK7214-75B Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7214-75B

Manufacturer Part Number
BUK7214-75B
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK7214-75B
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BUK7214-75B
Manufacturer:
NXP
Quantity:
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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
Dynamic characteristics
Q
D
DS
tot
DS(AL)S
DSon
GD
BUK7214-75B
N-channel TrenchMOS standard level FET
Rev. 02 — 3 February 2011
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
12 V, 24 V and 42 V loads
Automotive systems
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
gate-drain charge
Conditions
T
V
see
T
V
T
see
I
R
T
V
V
see
D
j
mb
j
j(init)
GS
GS
GS
GS
DS
≥ 25 °C; T
= 25 °C; see
= 70 A; V
Figure
Figure 12
Figure 13
= 25 °C; see
= 60 V; T
= 10 V; T
= 10 V; I
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
sup
j
D
D
≤ 185 °C
j
mb
GS
= 25 °C;
= 25 A;
= 25 A;
≤ 75 V;
Figure
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 185 °C rating
General purpose power switching
Motors, lamps and solenoids
= 25 °C;
= 10 V;
Figure 2
Figure 3
11;
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
12.6 14
-
15
Max Unit
75
70
167
133
-
V
A
W
mΩ
mJ
nC

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BUK7214-75B Summary of contents

Page 1

... BUK7214-75B N-channel TrenchMOS standard level FET Rev. 02 — 3 February 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... N-channel TrenchMOS standard level FET Simplified outline mb 1 SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B Graphic symbol G mbb076 2 3 © NXP B.V. 2011. All rights reserved Version ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET Min - - -20 Figure 1; - Figure 1 - ≤ 10 µ -55 - ° Ω ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK7214-75B Product data sheet = DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET 03nl20 = 10 μ 100 μ 100 ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7214-75B Product data sheet Conditions see −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET Min Typ Figure 71.4 03nk52 t p δ = ...

Page 6

... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B Min Typ Max = 25 ° -55 ° 0 4.4 ...

Page 7

... DS Fig 6. 03aa35 g (S) typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET Drain-source on-state resistance as a function of gate-source voltage; typical values ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 03nl18 10 20 Label is V (V) GS 150 200 250 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature 2 ...

Page 9

... 185 ° ° 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET 3000 C iss C 2000 C oss C 1000 rss 0 − function of drain-source voltage; typical values 03nl12 0 ...

Page 10

... min min 5.46 0.56 6.22 6.73 4.0 4.45 5.00 0.20 5.98 6.47 REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET min 10.4 2.95 2.285 4.57 0.5 9.6 2.55 EUROPEAN PROJECTION SOT428 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK7214-75B v.2 20110203 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK7214-75B N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2011 Document identifier: BUK7214-75B ...

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