BUK75 NXP [NXP Semiconductors], BUK75 Datasheet

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BUK75

Manufacturer Part Number
BUK75
Description
N-channel TrenchMOS standard level FET
Manufacturer
NXP [NXP Semiconductors]
Datasheet

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1. Product profile
2. Pinning information
Table 1.
[1]
Pin
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT404 package.
Description
Gate (G)
Drain (D)
Source (S)
mounting base,
connected to
drain (D)
Pinning - SOT78 and SOT404, simplified outlines and symbol
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect power transistor in a plastic package using
NXP High-Performance Automotive (HPA) TrenchMOS technology.
I
I
I
I
I
I
BUK75/7608-40B
N-channel TrenchMOS standard level FET
Rev. 02 — 16 November 2007
Very low on-state resistance
175 C rated
E
I
Automotive systems
Motors, lamps and solenoids
D
DS(AL)S
[1]
75 A
Simplified outline
SOT78 (TO-220AB)
241 mJ
1 2
mb
3
I
I
I
I
SOT404 (D2PAK)
I
I
Q101 compliant
Standard level compatible
R
P
General purpose power switching
12 V loads
tot
DSon
1
mb
2
157 W
= 6.6 m (typ)
3
Product data sheet
Symbol
mbb076
G
D
S

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BUK75 Summary of contents

Page 1

... BUK75/7608-40B N-channel TrenchMOS standard level FET Rev. 02 — 16 November 2007 1. Product profile 1.1 General description N-channel enhancement mode field-effect power transistor in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. 1.2 Features I Very low on-state resistance I 175 C rated 1.3 Applications I Automotive systems ...

Page 2

... C; pulsed see see Figure pulsed unclamped inductive load starting Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET Min - - - [1] Figure 2 and 3 - [2] - [1] Figure 2 - Figure [1] - ...

Page 3

... V GS [1] Capped due to package. Fig 2. Continuous drain current as a function of mounting base temperature Limit DSon DS D (1) 1 Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET 003aac081 (1) 50 100 150 003aac079 100 ...

Page 4

... Fig 4. Transient thermal impedance from junction to mounting bast as a function of pulse duration BUK75_7608-40B_2 Product data sheet N-channel TrenchMOS standard level FET Conditions see Figure Rev. 02 — 16 November 2007 BUK75/7608-40B Min Typ Max - - 0. 003aac080 ...

Page 5

... SOT78 from upper edge of drain mounting base to center of die SOT404 from source lead 6 mm from package to source bond pad Rev. 02 — 16 November 2007 BUK75/7608-40B Min Typ Max and ...

Page 6

... DSon ( (V) DS Fig 6. Drain-source on-state resistance as a function 003aac077 V ( 200 300 I (A) D Fig 8. Normalized drain-source on-state resistance Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET Min Figure gate-source voltage ...

Page 7

... Fig 10. Sub-threshold drain current as a function of 003aac073 3000 C (pF) 2000 1000 (A) D Fig 12. Input, output and reverse transfer capacitances Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET 1 min typ max ...

Page 8

... (V) GS Fig 14. Gate-source voltage as a function of turn-on 100 175 0.0 0.3 0.6 Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET gate charge; typical values. 003aac071 ...

Page 9

... scale 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION SOT78A Q 2.6 2.2 ISSUE DATE 03-01-22 05-03-14 © ...

Page 10

... 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2007. All rights reserved. SOT404 05-02-11 06-03- ...

Page 11

... Dimensions in mm. Fig 18. Reflow soldering footprint for SOT404 BUK75_7608-40B_2 Product data sheet 10.85 10.60 10.50 1.50 7.50 7.40 2.15 2.25 1.50 4.60 0.30 3.00 5.08 Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET 1.70 8.275 5.40 8.075 0.20 1.20 1.30 1.55 msd057 © NXP B.V. 2007. All rights reserved ...

Page 12

... Legal texts have been adapted to the new company name where appropriate. BUK75_7608_40B-01 20030319 BUK75_7608-40B_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 16 November 2007 BUK75/7608-40B Supersedes BUK75_7608_40B-01 - © NXP B.V. 2007. All rights reserved ...

Page 13

... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 16 November 2007 BUK75/7608-40B N-channel TrenchMOS standard level FET © NXP B.V. 2007. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2007. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK75_7608-40B_2 All rights reserved. Date of release: 16 November 2007 ...

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