BUK754R0-55B NXP Semiconductors, BUK754R0-55B Datasheet - Page 8

• Manufacturer Part Number: BUK754R0-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK754R0-55B
Product data sheet
Fig 10. Transfer characteristics: drain current as a
Fig 12. Normalized drain-source on-state resistance
(A)
I
100
D
1.5
0.5
a
80
60
40
20
2
1
0
0
function of gate-source voltage; typical values
-60
factor as a function of junction temperature
0
0
2
T
j
= 175 °C
60
4
T
120
j
= 25 °C
V
All information provided in this document is subject to legal disclaimers.
GS
T
j
03nh20
(V)
03ne89
( ° C)
180
6
Rev. 5 — 22 April 2011
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Gate-source voltage as a function of turn-on
V
GS(th)
V
(V)
(V)
GS
10
5
4
3
2
1
0
8
6
4
2
0
−60
junction temperature
gate charge; typical values
0
N-channel TrenchMOS standard level FET
V
DS
20
(V) = 14
0
BUK754R0-55B
40
60
max
min
typ
V
60
DS
(V) = 44
120
© NXP B.V. 2011. All rights reserved.
80
T
Q
j
03nh18
G
(°C)
03aa32
(nC)
100
180
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