BUK754R3-75C NXP Semiconductors, BUK754R3-75C Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK754R3-75C

Manufacturer Part Number
BUK754R3-75C
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
BUK754R3-75C
Manufacturer:
NXP
Quantity:
36 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
[1]
[2]
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK754R3-75C
N-channel TrenchMOS standard level FET
Rev. 02 — 21 April 2011
AEC Q101 compliant
Suitable for standard level gate drive
sources
12 V, 24 V and 42 V loads
Automotive systems
Continuous current is limited by package.
Refer to document 9397 750 12572 for further information.
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
T
T
Conditions
V
see
V
T
see
I
R
T
D
j
mb
j
j(init)
GS
GS
GS
≥ 25 °C; T
= 25 °C; see
= 100 A; V
Figure
Figure 8
= 25 °C; see
= 10 V; T
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
j
D
sup
≤ 175 °C
mb
GS
= 25 A;
Figure
≤ 75 V;
= 25 °C;
= 10 V;
Figure 2
Figure 4
Suitable for thermally demanding
environments due to 175 °C rating
General purpose power switching
Motors, lamps and solenoids
7;
[1][2]
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
3.7
-
Max Unit
75
100
333
4.3
630
V
A
W
mΩ
mJ

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BUK754R3-75C Summary of contents

Page 1

... BUK754R3-75C N-channel TrenchMOS standard level FET Rev. 02 — 21 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...

Page 3

... T pulsed ° ≤ 100 sup °C; unclamped GS j(init) see Figure 3 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C Min Max - -20 20 [1][2] Figure 1; - 192 [3][2] - 100 [3][2] Figure 1; ...

Page 4

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C N-channel TrenchMOS standard level FET 100 150 Normalized total power dissipation as a function of mounting base temperature 003aab385 (ms) AL © NXP B.V. 2011. All rights reserved. ...

Page 5

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK754R3-75C Product data sheet Limit DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C N-channel TrenchMOS standard level FET 100 μ 100 (V) DS 003aab393 = 10 μs ...

Page 6

... V; see MHz °C; see Figure 1.2 Ω Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C Min Typ Max - - 0. Min Typ Max 4.4 1 ...

Page 7

... T (°C) j Fig 6. Sub-threshold drain current as a function of gate-source voltage All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C N-channel TrenchMOS standard level FET Min Typ - 4.5 - 3 ° 155 min typ max ...

Page 8

... V DS 8000 4000 150 200 Q (nC) G Fig 10. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C N-channel TrenchMOS standard level FET 2.4 1.8 1.2 0.6 0 − 120 Normalized drain-source on-state resistance factor as a function of junction temperature ...

Page 9

... Product data sheet 250 I S (A) 200 150 100 = 175 ° ° 0.5 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C N-channel TrenchMOS standard level FET 003aab384 1 (V) SD © NXP B.V. 2011. All rights reserved ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 11

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK754R3-75C separated from data sheet BUK75_7E4R3-75C v.1. BUK75_7E4R3-75C v.1 20060810 BUK754R3-75C Product data sheet ...

Page 12

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 21 April 2011 BUK754R3-75C N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2011 Document identifier: BUK754R3-75C ...

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