BUK7606-75B NXP Semiconductors, BUK7606-75B Datasheet - Page 6

• Manufacturer Part Number: BUK7606-75B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7606-75B
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
400
300
200
100
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
20
2
2
8
4
min
7
6.5
typ
6
V
4
GS
= 4.5 V
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
5.5
DS
(V)
03ng98
03aa35
(V)
Rev. 03 — 3 February 2011
10
6
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
120
100
80
60
40
20
8
7
6
5
4
0
of gate-source voltage; typical values
junction temperature
T
Drain-source on-state resistance as a function
Gate-source threshold voltage as a function of
5
0
j
N-channel TrenchMOS standard level FET
= 25 °C; I
D
10
20
= 25 A
BUK7606-75B
40
15
© NXP B.V. 2011. All rights reserved.
V
GS
I
D
(A)
(V)
03ng97
03ng95
20
60
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