BUK7628-55A NXP Semiconductors, BUK7628-55A Datasheet - Page 3

• Manufacturer Part Number: BUK7628-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
AVALANCHE LIMITING VALUE
June 2000
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
Normalised Current Derating
D 25 ˚C
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
= 34 A; V
5 V
= 5 V; R
3
DD
GS
= 50 ; T
25 V;
0.01
1000
100
0.1
0.000001
10
10
I
1
D
1
1
& I
Zth / (K/W)
0.02
Fig.3. Safe operating area. T
0.1
0.05
0.5
0.2
0
ID / A
D =
RDS(on) = VDS/ ID
Fig.4. Transient thermal impedance.
DM
mb
Z
= f(V
= 25 ˚C
0.0001
th j-mb
D.C.
DS
= f(t); parameter D = t
); I
10
DM
0.01
MIN.
single pulse; parameter t
VDS / V
VDS / V
-
PD
TYP.
tp =
1
10us
100 us
1 ms
10 ms
100 ms
100
-
Product specification
BUK7528-55A
BUK7628-55A
tp
mb
T
MAX.
= 25 ˚C
p
100
/T
58
D=
tp
T
t
Rev 1.100
1000
10000
UNIT
mJ
p