BUK7628-55A NXP Semiconductors, BUK7628-55A Datasheet - Page 5

• Manufacturer Part Number: BUK7628-55A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
June 2000
TrenchMOS
Standard level FET
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Fig.13. Typical capacitances, C
-100
5
4
3
2
1
0
I
C = f(V
GS(TO)
0.01
D
VGS(TO) / V
0
Thousands / pF
= f(V
Fig.12. Sub-threshold drain current.
max.
min.
typ.
Fig.11. Gate threshold voltage.
= f(T
-50
GS)
DS
); conditions: V
; conditions: T
1
j
); conditions: I
0.1
0
transistor
2%
Tj / C
2
50
VDS/V
j
GS
1
D
= 25 ˚C; V
typ
Crss
= 1 mA; V
= 0 V; f = 1 MHz
100
Sub-Threshold Conduction
3
iss
, C
150
98%
BUK759-60
DS
10
Coss
DS
oss
4
= V
, C
= V
Ciss
200
GS
rss
GS
.
100
5
5
Fig.14. Typical turn-on gate-charge characteristics.
12
10
120
100
V
8
6
4
2
0
80
60
40
20
I
Fig.16. Normalised avalanche energy rating.
0
F
GS
0
VGS / V
120
110
100
0.0
90
80
70
60
50
40
30
20
10
= f(V
IF / A
0
= f(Q
Fig.15. Typical reverse diode current.
20
W
WDSS%
SDS
DSS
5
G
); conditions: I
40
); conditions: V
% = f(T
60
10
0.5
mb
VDS= 14V
80
); conditions: I
Tj / ˚C =
QG / nC
VSDS / V
15
Tmb / C
D
100
GS
= 50 A; parameter V
= 0 V; parameter T
120
175
20
Product specification
VDS= 44V
1.0
BUK7528-55A
BUK7628-55A
140
D
= 75 A
25
25
160
Rev 1.100
180
30
DS
1.5
j