BUK764R0-55B NXP Semiconductors, BUK764R0-55B Datasheet - Page 4

• Manufacturer Part Number: BUK764R0-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 1.
Fig 3.
(A)
I
D
200
150
100
50
0
25
mounting base temperature.
(1) Capped at 75 A due to package.
Continuous drain current as a function of
(1) Single-pulse; T
(2) Single-pulse; T
(3) Repetitive
Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time.
75
(1)
j
j
= 25 °C.
= 150 °C.
125
(A)
I
10
AL
10
10
-1
2
1
10
T
mb
All information provided in this document is subject to legal disclaimers.
-3
001aaf871
(°C)
175
10
Rev. 5 — 22 April 2011
-2
10
-1
Fig 2.
P
(%)
der
120
80
40
0
1
function of mounting base temperature
Normalized total power dissipation as a
0
t
AL
N-channel TrenchMOS standard level FET
003aab677
(ms)
(1)
(2)
(3)
10
50
BUK764R0-55B
100
150
© NXP B.V. 2011. All rights reserved.
T
mb
03na19
(°C)
200
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