BUK764R0-55B NXP Semiconductors, BUK764R0-55B Datasheet - Page 7

• Manufacturer Part Number: BUK764R0-55B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK764R0-55B
Product data sheet
Fig 6.
Fig 8.
(A)
(A)
I
I
10
10
10
10
10
10
D
D
300
250
200
150
100
50
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
10
20
7
2
6.5
2
4
min
6
typ
6
4
V
GS
max
(V) = 4
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
5
4.5
DS
5.5
(V)
03nh22
03aa35
(V)
10
6
Rev. 5 — 22 April 2011
Fig 7.
Fig 9.
R
(m Ω)
g
(S)
DSon
fs
120
100
80
60
40
20
7
6
5
4
3
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
5
0
N-channel TrenchMOS standard level FET
10
20
BUK764R0-55B
15
40
V
© NXP B.V. 2011. All rights reserved.
I
GS
D
(A)
(V)
03nh21
03nh19
20
60
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