BUK7675-100A NXP Semiconductors, BUK7675-100A Datasheet - Page 8

• Manufacturer Part Number: BUK7675-100A
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7675-100A_2
Product data sheet
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
V
(A)
I
GS(th)
D
(V)
35
30
25
20
15
10
5
0
5
4
3
2
1
0
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
0
2
0
T
j
= 175 °C
60
4
max
min
typ
T
j
= 25 °C
120
6
V
T
GS
j
(°C)
03nb29
03aa32
(V)
180
8
Rev. 02 — 31 July 2009
Fig 10. Gate-source voltage as a function of turn-on
Fig 12. Drain-source on-state resistance as a function
R
(mΩ)
V
(V)
DSon
GS
120
100
80
60
40
10
9
8
7
6
5
4
3
2
1
0
gate charge; typical values
of drain current; typical values
0
0
N-channel TrenchMOS standard level FET
V
GS
(V)= 5.5
10
V
DS
10
= 14 V
20
BUK7675-100A
6
30
6.5
20
7
V
DS
8
Q
© NXP B.V. 2009. All rights reserved.
40
G
= 80 V
10
(nC)
I
D
03nb27
03nb32
(A)
30
50
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