BUK7Y13-40B NXP Semiconductors, BUK7Y13-40B Datasheet - Page 5

• Manufacturer Part Number: BUK7Y13-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Characteristics
Table 6.
BUK7Y13-40B_3
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Source-drain diode
V
t
Q
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
DSS
GSS
rr
d(on)
r
d(off)
f
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
source-drain voltage
reverse recovery time I
recovered charge
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
T
I
T
I
see
I
T
I
T
V
T
V
V
V
T
V
T
V
see
I
see
V
I
V
V
f = 1 MHz; T
see
V
V
D
D
D
D
D
S
S
D
j
j
j
j
j
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
GS
= 250 μA; V
= 25 °C
= 250 μA; V
= -55 °C
= 1 mA; V
= 1 mA; V
= -55 °C; see
= 1 mA; V
= 175 °C; see
= 175 °C
= 25 °C
= 175 °C; see
= 25 A; V
= 20 A; dI
= 10 A; V
Figure 10
Figure 13
Figure 16
Figure 15
= 40 V; V
= 40 V; V
= 0 V; V
= 0 V; V
= 30 V; R
= 10 V; I
= 10 V; I
= 0 V; V
= 10 V; see
= 0 V; V
= 10 V; R
GS
DS
S
DS
j
DS
DS
GS
GS
DS
DS
D
D
Rev. 03 — 26 May 2008
/dt = 100 A/μs;
= 25 °C;
GS
GS
L
G(ext)
GS
GS
and
and
= 25 A; T
= 25 V; T
= 25 A;
= 32 V;
= V
= V
= V
= 2.5 Ω;
= 20 V; T
= -20 V;
= 30 V
= 25 V;
Figure 10
Figure 14
Figure 10
= 0 V;
= 0 V; T
Figure 12
= 0 V;
= 0 V;
GS
11
12
GS
GS
= 10 Ω
; T
;
;
j
j
j
= 25 °C;
j
j
= 25 °C;
= 25 °C;
= 25 °C
= 25 °C
N-channel TrenchMOS standard level FET
Min
40
36
2
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
BUK7Y13-40B
Typ
-
-
3
-
-
-
0.02
2
2
-
11
0.85
41
22
19
6
5
983
280
138
9
25
35
27
Max
-
-
4
4.4
-
500
1
100
100
25
13
1.2
-
-
-
-
-
1311
336
189
-
-
-
-
© NXP B.V. 2008. All rights reserved.
Unit
V
V
V
V
V
μA
μA
nA
nA
mΩ
mΩ
V
ns
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
5 of 12