BUK7Y13-40B NXP Semiconductors, BUK7Y13-40B Datasheet - Page 8

• Manufacturer Part Number: BUK7Y13-40B
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK7Y13-40B_3
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
10
8
6
4
2
0
T
V
charge; typical values
0
GS
j
= 25 °C; I
= 0V
D
= 10 A
8
V
DS
= 14 V
16
(A)
I
s
60
40
20
V
0
DS
Q
0
G
003aab399
= 32 V
(nC)
0.2
24
Rev. 03 — 26 May 2008
0.4
T
T
j
j
= 175 °C
= 25 °C
Fig 15. Input, output and reverse transfer capacitances
0.6
(pF)
1600
1200
C
800
400
0
10
V
as a function of drain-source voltage; typical
values
GS
0.8
−1
N-channel TrenchMOS standard level FET
003aab398
V
= 0V ; f = 1 M H z
SD
(V)
1.0
1
BUK7Y13-40B
C
C
C
oss
rss
iss
10
V
© NXP B.V. 2008. All rights reserved.
DS
003aab397
(V)
10
2
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