BUK9506-75B NXP Semiconductors, BUK9506-75B Datasheet - Page 4

• Manufacturer Part Number: BUK9506-75B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
BUK9506-75B
Product data sheet
Symbol
R
R
Fig 3.
Fig 4.
th(j-mb)
th(j-a)
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
Z
(K/W)
th(j-mb)
(A)
I
10
10
10
D
10
10
10
−1
−2
−3
1
3
2
1
10
10
−1
−6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10
Limit R
−5
All information provided in this document is subject to legal disclaimers.
Capped at 75 A due to package
DSon
Conditions
see
vertical in still air
= V
10
Rev. 03 — 7 February 2011
1
Figure 4
−4
DS
/I
D
10
−3
DC
10
10
−2
N-channel TrenchMOS logic level FET
P
V
DS
t
10
p
(V)
−1
T
t
p
t
BUK9506-75B
p
Min
-
-
= 10 μs
δ =
(s)
03ng87
03ng88
100 μs
1 ms
10 ms
100 ms
t
T
t
p
10
1
2
Typ
-
60
© NXP B.V. 2011. All rights reserved.
-
Max
0.5
Unit
K/W
K/W
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