BUK9506-75B NXP Semiconductors, BUK9506-75B Datasheet - Page 7

• Manufacturer Part Number: BUK9506-75B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9506-75B
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
(A)
DSon
I
D
100
80
60
40
20
12
10
0
8
6
4
0.0
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
V
GS
0.5
= 3 V
100
1.0
3.2
T
j
= 175 °C
1.5
3.4
3.6
200
2.0
3.8
4
All information provided in this document is subject to legal disclaimers.
I
T
2.5
D
j
5
V
= 25 °C
(A)
GS
03ng82
03ng85
10
(V)
Rev. 03 — 7 February 2011
300
3.0
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.5
2.0
1.5
1.0
0.5
2.4
1.6
0.8
0
0
−60
−60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9506-75B
60
60
max
min
typ
120
120
© NXP B.V. 2011. All rights reserved.
T
T
j
j
(°C)
(°C)
03ng52
03nb25
180
180
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