BUK9510-55A NXP Semiconductors, BUK9510-55A Datasheet - Page 2

• Manufacturer Part Number: BUK9510-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9510-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9510-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
[1]
Package
Name
TO-220AB
Symbol Parameter
Avalanche ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Continuous current is limited by package.
non-repetitive
drain-source avalanche
energy
gate-drain charge
Quick reference data
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 17 February 2011
Simplified outline
…continued
Conditions
I
R
T
V
V
see
D
j(init)
GS
DS
GS
SOT78A (TO-220AB)
= 75 A; V
Figure 13
= 44 V; T
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
1 2
D
sup
mb
= 25 A;
j
GS
= 25 °C;
≤ 55 V;
3
= 5 V;
N-channel TrenchMOS logic level FET
BUK9510-55A
Graphic symbol
Min
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Typ
-
28
Version
SOT78A
D
S
Max Unit
333
-
2 of 14
mJ
nC