BUK9510-55A NXP Semiconductors, BUK9510-55A Datasheet - Page 9

• Manufacturer Part Number: BUK9510-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9510-55A
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
charge; typical values
0
20
V
DD
= 14 V
40
V
DD
= 44 V
(A)
I
S
100
80
60
40
20
0
60
0
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Q
G
(nC)
03nd71
Rev. 02 — 17 February 2011
80
0.5
T
j
= 175 °C
Fig 14. Input, output and reverse transfer capacitances
(pF)
1.0
8000
6000
4000
2000
C
0
10
as a function of drain-source voltage; typical
values
T
V
j
SD
−2
= 25 °C
(V)
03nd70
N-channel TrenchMOS logic level FET
1.5
10
−1
BUK9510-55A
C
1
C
C
rss
iss
oss
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nd77
(V)
10
2
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