BUK9520-100B NXP Semiconductors, BUK9520-100B Datasheet - Page 6

• Manufacturer Part Number: BUK9520-100B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
BUK9520-100B_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(A)
R
(mΩ)
10
I
10
10
10
10
10
D
DS on
-1
-2
-3
-4
-5
-6
28
24
20
16
12
gate-source voltage
of gate-source voltage; typical values.
Sub-threshold drain current as a function of
Drain-source on-state resistance as a function
0
2
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
4
1
min
…continued
6
typ
2
Conditions
I
see
I
V
S
S
max
DS
= 25 A; V
= 20 A; dI
8
V
Figure 13
= 30 V; T
GS
003a a c772
03aa36
V
GS
(V)
(V)
GS
10
S
3
/dt = -100 A/µs; V
j
Rev. 01 — 6 May 2009
= 25 °C
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
gfs (S )
(A)
I
GS
150
120
D
160
120
90
60
30
80
40
0
0
= 0 V;
function of drain-source voltage; typical values
drain current; typical values.
Output characteristics: drain current as a
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
1
30
BUK9520-100B
2
Min
-
-
-
60
3
Typ
0.86
80
272
V
GS
90
(V) =
© NXP B.V. 2009. All rights reserved.
4
003a a c771
003a a c774
V
I
Max
1.2
-
-
DS
D
10
(A)
(V)
4.5
3.4
3.2
2.7
2.5
3
120
5
Unit
V
ns
nC
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