BUK9535-55A NXP Semiconductors, BUK9535-55A Datasheet - Page 3

• Manufacturer Part Number: BUK9535-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9535-55A
Product data sheet
Fig 1.
Fig 3.
P
(%)
I
(A)
DM
der
100
10
10
80
60
40
20
10
0
1
3
2
function of mounting base temperature
currents as a function of drain-source voltage
Normalized total power dissipation as a
T
Safe operating area; continuous and peak drain
0
1
mb
R
= 25 °C
DS(on)
50
= V
DS
/ I
D
D.C.
100
10
V
DS
150
(V)
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf283
003aaf285
(°C)
t
10 μs
100 μs
1 ms
10 ms
p
= 1 μs
200
10
Rev. 02 — 28 April 2011
2
Fig 2.
Fig 4.
WDSS
(%)
(%)
I
D
100
120
80
60
40
20
80
40
0
0
function of mounting base temperature
20
avalanche energy as a function of
mounting-base temperature
V
Normalized continuous drain current as a
I
Normalised drain-source non-repetitive
0
D
GS
= 75 A
≥ 5 V
N-channel TrenchMOS logic level FET
50
60
BUK9535-55A
100
100
150
140
© NXP B.V. 2011. All rights reserved.
T
T
(mb)
mb
003aaf284
003aaf299
(°C)
(°C)
200
180
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